Kyma Technologies to Receive $2.8M for Bulk Gallium Nitride Materials Development

03 February 2010 - Raleigh, NC

Kyma Technologies, Inc., a leading supplier of ultra-high purity crystalline gallium nitride (GaN) and aluminum nitride (AlN) materials and related products and services, is slated to receive  $2.8 million from the U.S. Department of Defense (DOD) for the continued development of low defect density GaN materials for high performance electronic device applications.

This funding, which was included in the Fiscal Year 2010 Department of Defense Appropriations Bill, will support Kyma’s ongoing efforts to make bigger, better, and more cost-effective bulk GaN substrates, which are needed for multiple next-generation defense systems as well as several major commercial applications.

This funding will help support the development of a viable domestic supply of GaN materials – the most important semiconductor material discovered since silicon (Si).  Historically, DOD has led the way in advancing semiconductor materials, creating domestic high tech jobs and supporting the development of entire new industries, while supporting important advances in US defense capabilities.  The United States led the way in developing Si, gallium arsenide (GaAs), and indium phosphide (InP), which have enabled over $250 billion in commercial device applications.  Unfortunately, the United States has fallen behind in producing GaN materials, which are already more important than GaAs and InP.  Japan has a major effort in GaN, while recently South Korea and China have begun aggressively pursuing GaN materials capabilities.   With over $100B in eventual commercial device applications and likely impact on essentially all future defense systems, the United States has a pressing need to develop and maintain a strong domestic GaN manufacturing capability.

Kyma is working with US Air Force Research Laboratory (AFRL) to get an associated contract in place.  Dr. Heather Splawn of Kyma will serve as Principal Investigator.

Dr. Keith Evans, Kyma President & CEO, stated:  “Kyma is sincerely grateful for the support and the vision of our congressional delegation, led by Congressman David Price, for making this funding possible.  We also thank AFRL for their continuing interest and support for domestic bulk GaN development.”

Dr. Edward Preble, Kyma COO and VP Business Development, added:  “We plan to utilize this very important support in the best possible way.  Our primary goals include creation of new sustainable high tech jobs, enhancement of our ability to serve our existing customers, and further penetration of our end markets.”

About Kyma Technologies

Kyma is a leading supplier of crystalline gallium nitride (GaN) and aluminum nitride (AlN) materials for a broad range of high performance nitride semiconductor device applications.

The market for nitride semiconductor devices is expected to surpass $30B over the next decade. The combined addressable market for GaN and AlN substrates is expected to surpass $500M in 2010.

For more information about Kyma Technologies, visit www.kymatech.com, e-mail This email address is being protected from spambots. You need JavaScript enabled to view it. , or call the company directly at 919.789.8880.

Kyma is a registered trademark of Kyma Technologies, Inc.