Kyma Executive Ed Preble Gives Invited Talk at Workshop on Advanced Substrates for LED Manufacturing

01 December 2011 - Raleigh, NC

Kyma Technologies, Inc., a leading supplier of crystalline aluminum nitride (AlN) and gallium nitride (GaN) and related products and services, is pleased to announce its participation in an invitation only workshop held in Taipei, Taiwan this week. The workshop is focused on recent developments related to patterned sapphire substrate (PSS) technology for nitride semiconductor light emitting diode (LED) manufacturing.

At the workshop Dr. Edward Preble, Kyma’s Chief Technology Officer and Vice President of Business Development, gave an invited talk entitled “Plasma Vapor Deposition of Nano-Columnar (PVDNC) AlN on PSS for fabrication of high quality GaN LEDs.” In his talk he discussed the use of the PVDNC crystal growth process to produce nano-columnar structures on top of the micro-structured features already present on a PSS substrate, and the observed benefits by LED manufacturers.

“I am thankful to the organizers, especially Natsuko Aota-san and Hideo Aida-san at Namiki Precision Jewel Company, for inviting me to this meeting,” noted Dr. Preble. “I really enjoyed the open exchange of ideas on how to better capitalize on the many opportunities that are available to enhance the properties of sapphire substrates in support of better LED performance and reduced LED manufacturing costs.”

PSS substrates have become increasingly important in GaN LED manufacturing. Only a few years ago most GaN LEDs were made using flat sapphire; today up to 30% utilize PSS and the trend is expect to continue such that PSS may be more important than flat sapphire by 2015. There are several different methods, including both wet and dry etching, for making PSS, and the detailed microstructures being used and investigated are manifold. LED manufacturers and research scientists report several different benefits and those benefits seem to vary from group to group. Reported benefits include: 1) lower defect density in the GaN buffer, 2) higher thermal conductivity of the device heterostructures, and 3) greater light extraction efficiency.

Kyma’s PVDNC process has been used to deposit high quality AlN on both flat and PSS sapphire, as well as on flat silicon (Si), as a nucleation layer for improved GaN buffer layers. Kyma has not tried PVDNC AlN on patterned Si and encourages interested parties to contact the company for discussion.

About Kyma Technologies:

Kyma is a leading supplier of crystalline nitride semiconductor materials including gallium nitride (GaN), aluminum nitride (AlN), and aluminum gallium nitride (AlGaN) and related products and services.

The market for nitride semiconductor devices is estimated to be $9B in 2011 and is expected to reach $90B over the long term, including $60B in visible lighting applications and $30B in power electronics applications.

Kyma’s materials products enable higher electrical efficiency in all of their customers’ applications, in support of a greener tomorrow.

For more information about Kyma Technologies, visit www.kymatech.com, e-mail This email address is being protected from spambots. You need JavaScript enabled to view it. , or call the company directly at 919.789.8880.

Kyma is a registered trademark of Kyma Technologies, Inc.