Kyma Technologies, Inc., a leading supplier of ultra-high purity crystalline gallium nitride (GaN) and aluminum nitride (AlN) materials and related products and services, announced today the hire of Dr. Tanya Paskova, a world renowned expert in gallium nitride (GaN) crystal growth and characterization, as Kyma's Chief Scientist.


Dr. Paskova has been collaborating with Kyma since early 2006, which has resulted in several scientific journal articles and conference presentations documenting the structural properties of Kyma's native nonpolar GaN substrate product line.

Dr. Paskova has obtained her academic degrees from Sofia University (Bulgaria) and Linköping University (Sweden). She held posts as an assistant professor at Sofia University, a visiting lecturer and an associate professor at Linköping University and University of Bremen (Germany). She spent most of her career working in the group of Professor Bo Monemar, focusing on development of GaN epitaxial growth and study of basic properties of nitride materials and structures. Dr Paskova has authored more than 200 scientific papers, reviews and chapters in highly prestigious journals and books, and has given several invited talks at international conferences and university seminars. She is also an editor of two scientific books, and a member of PhD evaluation and referee boards for numerous physics and crystal growth journals.

Dr. Drew Hanser, Kyma's vice president business development and CTO, commented, "The addition of Tanya to our team represents an exciting opportunity to build upon our ongoing efforts to improve our current products, to develop new products, and to grow our portfolio of strategic partnerships. I believe that both our commercial customers and our government contract supporters will be pleased with the results of bringing Tanya on board."

Dr. Keith Evans, Kyma's president and CEO, added, "We are very pleased that Tanya has decided to join our team. She is not only an expert in crystalline GaN materials, but also a true scientific leader that has developed highly productive collaborative research partnerships around the world. Tanya has the understanding, experience, and relationship capital to help Kyma accelerate our rate of progress in many key areas."

About Kyma Technologies

Kyma spun out of North Carolina State University's Materials Science and Engineering Department in 1998 to pursue the development of gallium nitride (GaN) and aluminum nitride (AlN) substrates for a broad range of high performance nitride semiconductor device applications. Kyma's substrates have great potential to enable critically needed improvements in device cost, performance, and reliability and thus are expected to replace most foreign substrates such as sapphire and silicon carbide for the most demanding applications.

Kyma's diversified product offering includes: ultra-low defect density native (free-standing) GaN in customer-defined orientation including polar (c-plane Ga-face or N-face) and non-polar (a-plane and m-plane), GaN and AlN templates grown on sapphire and other substrates, and ultra-high purity polycrystalline GaN.

The market for nitride semiconductor devices is expected to surpass $9B by 2010. The combined addressable market for GaN and AlN substrates is expected to surpass $500M by 2010.

For more information about Kyma Technologies, please visit our website, send us e-mail at, or call the company directly at 919.789.8880.

Kyma is a registered trademark of Kyma Technologies, Inc.