Kyma Technologies Announces Cooperative Research and Development Agreement with United States Air Force Research Laboratories

Kyma Technologies, Inc. has signed a cooperative research and development agreement (CRADA) with the U.S. Air Force Research Laboratory (AFRL) to further understand how low defect density native gallium nitride (GaN) substrates might positively impact GaN field effect transistor (FET) device performance and reliability. The AFRL program manager for the CRADA is Mr. John Blevins, while Dr. Drew Hanser is the technical lead for Kyma Technologies.

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Kyma Technologies is Multiple Winner under the Missile Defense Agency SBIR/STTR Program

Kyma Technologies, Inc., a leading supplier of low defect density native gallium nitride (GaN) substrates, announced today that they have been selected for two new Phase I SBIR projects under the Missile Defense Agency (MDA) SBIR/STTR program. These selections closely follow Kyma's recent win of a new Phase II STTR effort, also under the MDA SBIR/STTR program. Each of these programs is focused on continued development of native gallium nitride (GaN) materials and devices and are driven by the potential of native GaN to enable critical advances in next generation military radar systems.

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Kyma Technologies Announces $1M Phase II STTR Project

Kyma Technologies, Inc., a leading supplier of low defect density native gallium nitride (GaN) substrates, announced today that they have been awarded a new research contract to further advance their leading single crystal gallium nitride (GaN) manufacturing technology. Their proposal entitled "Production of Large Area Semi-Insulating Gallium Nitride Substrates" was selected by the Missile Defense Agency (MDA) under the Small Business Technology Transfer (STTR) program for Phase II STTR funding. This follows the successful completion of a previously funded Phase I STTR from MDA wherein Kyma demonstrated the production of 3" diameter semi-insulating GaN for military radar applications.

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Kyma Technologies Participates at ICNS-6

Kyma Technologies, Inc., a leading supplier of low defect density native gallium nitride (GaN) substrates, had a key role in both the 6 th International Conference on Nitride Semiconductors (ICNS-6) and an invitation-only workshop entitled "Challenges in Bulk Nitride Growth: Future Directions and Measures" held just after ICNS-6. Both events were held in Bremen, Germany during the week of August 28 - September 3, 2005.

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