AlN Templates

Kyma’s AlN templates, available in diameters from 2" to 12", consist of a thin layer of crystalline AlN which was grown epitaxially by PVDNC™ on a sapphire or silicon substrate. 

Customers use our AlN templates as a low cost alternative to 2-step nitride nucleation processes as well as other custom applications. Kyma uses these templates for a number of different internal needs, including for our GaN epitaxy, on all substrate types. PVDNC™ has excellent scalability which results in lower cost of ownership when ramping production. LED customers report 1) better wavelength uniformity, 2) less ESD vulnerability, 3) higher LED brightness, and 4) better nucleation repeatability. Recently Kyma helped a customer to realize an advanced GaN-on-SI MISHEMT device technology which benefited from 15 microns of Kyma's PVD AlN deposited on the device backside.

 

Conduction Type Undoped
Resistivity >106 Ohm-cm
Front Surface Finish Epi-ready, <0.5nm (for 25nm)
Available Sizes 2-12"
Available Substrates Sapphire, Silicon
Available Thicknesses 10nm up to 15µm