Gallium Oxide Epiwafers

Kyma's ß-Ga2O3 epiwafers are available on commercially available ß-Ga2O3 substrates. These epiwafers have high electrical quality and high structural quality that matches that of the substrate.

Crystalline beta gallium oxide (ß-Ga2O3) is a promising wide bandgap semiconductor (WBGS) material due in part to its large bandgap of 4.8 - 4.9 eV, its high breakdown field of 8 MV/cm, and its high dielectric constant of 10, and good electron mobilities, which translate to a high voltage Baliga figure of merit (HV-BFOM) that is more than 3000 times greater than that of Si, more than 8 times greater than that of 4H-SiC, and more than 4 times greater than that of GaN. Also, its high frequency Baliga figure of merit (HF-BFOM) is ~150 times that of Si, ~3 times that of 4H-SiC, and 50% greater than that of GaN.

Customers can supply their own Ga2O3 substrates, or Kyma can procure them for the customer. Additionally, Kyma is gaining experience growing Ga2O3 on other substrates and welcomes customer inquiries about what is possible.

This is a very new product offering in a relatively new materials system, so we will be updating our capabilities as we and others gain experience. Our available data so far indicates we can produce layers as thin as 50 nm and as thick as 3 microns. Unintentionally doped layers show semi-insulating character and n-type layers can be reproduced and controlled with an electron concentration ranging from 5x1017/cm3 to 2x1018/cm3. Recent Hall effect data obtained on a Kyma grown n-type ß-Ga2O3 epiwafer shows a carrier concentration of 2x1018/cm3 and a Hall mobility of 67 cm2/V-s, which translates to a resistivity of 0.05 Ω cm (50 mΩ cm).

Kyma also offers Ga2O3 substrate reclaim and substrate finishing services - more information is available on Kyma's Wafer Fabrication services page.

Key Advantages:

  • Potential for high power & high voltage devices, as well as deep ultraviolet (UV) photodetectors
  • Growth rates of 5 μm/hr, suitable for mass production