Kyma’s products span an array of compound semiconductor applications, centered primarily on gallium nitride (GaN), but also including aluminum nitride (AlN), and other III-V nitride alloys and related products. Our products listed below address applications in all stages of development, from cutting edge R&D all the way to mass manufacturing. Please do not hesitate to contact us if you have questions about our products and how they can help improve your application.

• Description: Kyma AlN templates offer a low cost alternative to 2-step nitride nucleation processes
• Product: 10-1000nm of AlN epitaxy on sapphire, SiC, or Si substrates
• Click here to see AlN Template Products and Specifications

• Description: Kyma GaN templates allow direct growth of epitaxial layers, skipping thick GaN buffers
• Product: 1-150um of GaN epitaxy on sapphire, SiC, or Si substrates
• Click here to see GaN Template Products and Specifications

• Description: GaN substrates have orders of magnitude fewer defects per cm2 than GaN heteroepitaxy
• Product: Freestanding bulk GaN with epi-ready surface
• Click here to see GaN Substrate Products and Specifications

• Description: Kyma’s partners can produce device epitaxy for any nitride structure
• Product:
  • a) Customer specified device structure (LED, HEMT, Schottky)
  • b) Basic epitaxial layers (n-type, p-type, semi-insulating)
• Click here to see GaN Device Epitaxy Products and Specifications

• Description: High purity (5N or 6N purity) polycrystalline Gallium Nitride
• Product: Polycrystalline GaN pellets or sputtering targets
• Click here to see High Purity Polycrystalline GaN Products and Specifications

• Description: Abrasive wire used to cut high hardness materials like GaN, SiC, sapphire
• Product: Steel core plus metal matrix and diamond grit
• Click here to see Diamond Wire Products and Specifications