GaN Materials Growth & Characterization
[Also see Thermal Conductivity of GaN]
2018
- Towards Manufacturing Large Area GaN Substrates from QST® Seeds - J. Leach et al., Kyma-led co-authored paper
- RF GaN/Si HEMT Growth Development Using Single Wafer MOCVD Technology - M. Pan et al., cites Kyma materials
2017
- Photo-Hall-effect study of excitation and recombination in Fe-doped GaN, DC Look et al., Kyma co-authored paper
- Evaluation of the concentration of point defects in GaN - M. Reshchikov et al., Kyma co-authored paper
2016
- Photoexcited carrier trapping and recombination at Fe centers in GaN - TK Uždavinys et al, Kyma co-authored paper
- Examination of Iron Doped Gallium Nitride as a Near-IR Laser Material - C. Brown et al., Kyma co-authored paper
- Incorporation of Mg in Free-Standing HVPE GaN Substrates - M. Zvanut et al., Kyma co-authored paper
2015
- Effect of strain in sputtered AlN buffer layers on the growth of GaN by molecular beam epitaxy - W. Kong et al., Kyma co-authored paper
- Birefringence and refractive indices of wurtzite GaN in the transparency range - S. Shokhovets et al., Kyma co-authored paper
- AlGaN devices and growth of device structures - KA Jones et al., - Kyma co-authored paper
2014
- Site-specific comparisons of V-defects and threading dislocations in InGaN/GaN multi-quantum-wells grown on SiC and GaN substrates - F. Liu et al., Kyma co-authored paper
- Large-area bow-free n+ GaN templates by HVPE for LEDs - J. Leach et al., Kyma authored paper
- 2″‐4″ diameter GaN‐on‐sapphire substrates free of wafer bow at all temperatures - EA Preble et al. - Kyma authored paper
2013
- Thermoelectric Properties of Undoped and Si-doped Bulk GaN - B. Wang et al., Kyma co-authored paper
2012
- Electrical and optical properties of bulk GaN substrates studied by Kelvin probe and photoluminescence - J. McNamara et al., Kyma co-authored paper
- Charge transfer in semi-insulating Fe-doped GaN - J. Dashdorj et al., Kyma co-authored paper
- Microstructure of epitaxial GaN films grown on chemomechanically polished GaN (0001) substrates - L. Huang et al, Kyma co-authored paper
- Indium incorporation in InGaN/GaN quantum wells grown on m‐plane GaN substrate and c‐plane sapphire - K. Lai et al., Kyma co-authored paper
- Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates, G. Liu et al., Kyma co-authored paper
- Below band-gap optical absorption and photoluminescence excitation spectroscopy at room temperature in low-defect-density bulk GaN:Fe, P. Gladkov et al., Kyma co-authored paper
2011
- Characterization of freestanding semi-insulating Fe-doped GaN by photoluminescence and electromodulation spectroscopy, DO Dumcenco et al., Kyma co-authored paper
2010
- Inclined dislocation-pair relaxation mechanism in homoepitaxial green GaInN/GaN light-emitting diodes, M Zhu et al., Kyma co-authored paper
- Development of the Bulk GaN Substrate Market, AD Hanser & KR Evans, Kyma authored book chapter
- Effect of m-plane GaN substrate miscut on InGaN/GaN quantum well growth - K. Lai et al., Kyma co-authored paper
- Radiation-induced defects in GaN, NT Son, et al., Kyma co-authored paper
- Optimization of homoepitaxially grown AlGaN/GaN heterostructures, JA Grenko, et al., Kyma co-authored paper
- GaN Substrates for III-Nitride Devices, T. Paskova et al., Kyma authored paper
- Physical Properties of AlGaN/GaN Heterostructures Grown on Vicinal Substrates, JA Grenko et al., Kyma co-authored paper
- Optical characterization of bulk GaN substrates with c ‐, a ‐, and m ‐plane surfaces, PP Paskov et al., Kyma co-authored paper
- Wavelength-stable cyan and green light emitting diodes on nonpolar m-plane GaN bulk substrates, T Detchprohm et al., Kyma co-authored paper
- Effect of Fe doping on the terahertz conductivity of GaN single crystals, F Kadlec et al., Kyma co-authored paper
- Mg‐related acceptors in GaN, B. Monemar et al, Kyma co-authored paper
2009
- GaN Substrates—Progress, Status, and Prospects, T Paskova & KR Evans, Kyma authored paper
- Cathodoluminescence evaluation of subsurface damage in GaN substrate after polishing, KY Lai et al., Kyma co-authored paper
- Identification of the gallium vacancy–oxygen pair defect in GaN, NT Son et al., Kyma co-authored paper
- Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates - K. Lai et al., Kyma co-authored paper
- Polar and nonpolar HVPE GaN substrates: impact of doping on the structural, electrical and optical characteristics, T Paskova et al., Kyma led & co-authored paper
2008
- Fabrication and characterization of native non-polar GaN substrates - D. Hanser et al., Kyma-authored paper
- Deep Centers In Semi-Insulating Current Topics In Solid State Physics Fe-Doped Native GaN Substrates Grown By Hydride Vapour Phase Epitaxy, Z-Q Fang et al., Kyma co-authored paper
- Enlargement of bulk non‐polar GaN substrates by HVPE regrowth, KY Lai et al., Kyma co-authored paper
- Development and prospects of nitride materials and devices with nonpolar surfaces, T Paskova et al., Kyma authored paper