KO-GaN™

Kyma’s KO-GaN™ materials are grown by a patented and proprietary process based on hydride vapor phase epitaxy (HVPE) and are designed to be highly resistive in the dark yet highly conductive when properly illuminated.

It is the enabling material in Kyma''s high-speed high-voltage photoconductive semiconductor switch (PCSS) device, the KO-Switch™.

Key Characteristics:

  • Prepared using a patented and proprietary process based on hydride vapor phase epitaxy (HVPE)
  • Broad spectral response over the full visible region
  • Short carrier lifetime (<1ns)
  • Ability to stand-off high voltages (>40kV)