PureGaN™
PureGaNtm films are high-purity/lightly doped epitaxial GaN films grown on bulk GaN substrates for high-power vertical GaN devices.
PureGaNtm films are high-purity/lightly doped epitaxial GaN films grown on bulk GaN substrates for high-power vertical GaN devices.
Kyma’s UV Grade AlN on Sapphire Templates, available in diameters from 2" to 6", consist of a thin layer of high purity crystalline AlN which is designed to meet the demanding requirements of UVC LED applications.
Kyma's new c-plane GaN substrates have improved defect density, very low pitting, and is now available in 4”. This new generation of bulk GaN from Kyma is an excellent starting point for specialty lighting, laser diodes, and the burgeoning market of vertical GaN power electronics.
Kyma’s PVD with Nanocolumns (PVDNC™) AlN templates, available in diameters from 2" to 12", consist of a thin layer of nanocolumnar crystalline AlN which was grown epitaxially by PVDNC™ on a sapphire or silicon substrate.
Kyma’s GaN on sapphire templates are available in diameters from 2" up to 8" or 200-mm and consist of a thin layer of crystalline GaN grown by HVPE on a sapphire substrate. Epi-ready templates now available...inquire today!
Kyma’s 200-mm HVPE GaN on QST® Templates consist of 10 microns of HVPE GaN grown on 200-mm diameter QST® substrates provided by Qromis, Inc.
Kyma’s GaN templates are available in diameters from 2" up to 8" or 200-mm and consist of a thin layer of crystalline GaN grown epitaxially by HVPE on a silicon substrate.
Kyma's polycrystalline GaN (polyGaN) materials are useful for applications that require higher purity and/or lower surface area than legacy sources.
Kyma supplies Custom III-N Epiwafers both for materials studies and for a number of device applications, including light emitting diodes (LEDs), microwave / RF transistors, acoustic wave filters, photodiodes, and power switching.