GaN Substrates (Bulk, Non-Polar)
Kyma's non-polar bulk GaN substrates include both a-plane and m-plane substrates which are sliced from GaN boules and can be prepared with on-axis orientation or can be intentionally misoriented, depending on customer requirements.
Typical properties of Kyma's non-polar GaN substrates are shown in the table below:
| Conduction Type | Undoped (N-) | Si-doped (N+) | Semi-insulating |
|---|---|---|---|
| Carrier Concentration | >5x10^17/cm3 | >1x10^18/cm3 | Not Applicable |
| Dislocation Density | <1x10^7/cm^2 | <1x10^7/cm^2 | <1x10^7/cm^2 |
| Resistivity | <5 Ohm-cm | <0.02 Ohm-cm | <10^6 Ohm-cm |
| Front Surface Finish | Epi-ready, RMS <0.5nm | Epi-ready, RMS <0.5nm | Epi-ready, RMS <0.5nm |
| Available Orientations | M-plane, A-plane | M-plane, A-plane | M-plane, A-plane |
| Typical Size | 5mmx10mm | 5mmx10mm | 5mmx10mm |