Kyma's ß-Ga₂O₃ epiwafers are grown on (010) ß-Ga₂O₃ substrates and have high electrical quality and also high structural quality that matches that of the substrate.

High Mobilities Achieved: Recent epiwafers produced at Kyma with carrier concentrations in the 1 to 2 x 10¹⁷ cm^-3 range show room temperature carrier mobilities that routinely exceed 100 cm²/V-s and as high as 123 cm²/V-s, and low temperature mobilities as high as 500 cm²/V-s, with the exact values depending on the doping level and the structural quality of the ß-Ga₂O₃ substrate.

Substrate Choices: Customers can supply their own (010) ß-Ga₂O₃ substrates, or Kyma can provide them as well - see our (010) ß-Ga₂O₃ substrate product page. Additionally, Kyma is gaining experience in growing ß-Ga2O3 epilayers on other orientations of ß-Ga2O3 substrates as well as on alternative substrates such as sapphire. We welcome customer inquiries about what is possible.