GaN Based Power Switches
[Also see GaN Based Photoconductive Semiconductor Switch (PCSS) Devices]
2018
- GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000V using local substrate removal and AlN ultra-wide bandgap - E. Dogmus et al., Kyma's assistance is acknowledged
2016
- IVT measurements of GaN power Schottky diodes with drift layers grown by HVPE on HVPE GaN substrates - R. Tompkins et al., Kyma co-authored paper
2014
- GaN Power Schottky Diodes with Drift Layers Grown on Four Substrates - R. Tompkins et al., Kyma co-authored paper
2011
- Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate - Y. Wang et al., Kyma co-authored paper
- Electrical characteristics of the vertical GaN rectifiers fabricated on bulk GaN wafer, Y. Wang et al., Kyma co-authored paper
2010
- In Situ Raman Analysis of a Bulk GaN-Based Schottky Rectifier Under Operation, H. Xu et al., Kyma co-authored paper
2006
- Electrical characteristics of bulk GaN-based Schottky rectifiers with ultrafast reverse recovery - Y. Zhou et al., Kyma co-authored paper