Kyma's new c-plane GaN substrates have improved defect density, very low pitting, and is now available in 4”. This new generation of bulk GaN from Kyma is an excellent starting point for specialty lighting, laser diodes, and the burgeoning market of vertical GaN power electronics.  

Homoepitaxial growth of GaN device structures on Kyma's bulk GaN substrates greatly improves a number of important device properties when compared with heteroepitaxial growth on SiC, sapphire, or silicon. Kyma's high purity GaN substrate allows GaN-based device manufacturers to eliminate interlayers, processing steps, and improve device quality over those grown on any other substrate.

Typical properties of Kyma's c-plane GaN substrates are shown in the table below: