Kyma Technologies Wins Defense Contract to Advance Gallium Nitride Materials for Power Dense Communications Nodes

Kyma Technologies, Inc. (Kyma) has been awarded up to $3.3M under a new multi-year contract by the Department of Defense, with funding support from both the Missile Defense Agency (MDA) and Air Force Research Laboratory (AFRL). Under the new contract, Kyma is focusing its efforts on advancing GaN-based high-power high-frequency (HPHF) electronic device technology by employing Kyma's low defect density native GaN substrate materials. Native GaN has the potential to enhance the performance and reliability of a variety of radar, electronic warfare, communications and optoelectronic systems essential to the Department of Defense.

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Kyma Technologies Announces Cooperative Research and Development Agreement with United States Air Force Research Laboratories

Kyma Technologies, Inc. has signed a cooperative research and development agreement (CRADA) with the U.S. Air Force Research Laboratory (AFRL) to further understand how low defect density native gallium nitride (GaN) substrates might positively impact GaN field effect transistor (FET) device performance and reliability. The AFRL program manager for the CRADA is Mr. John Blevins, while Dr. Drew Hanser is the technical lead for Kyma Technologies.

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Kyma Technologies is Multiple Winner under the Missile Defense Agency SBIR/STTR Program

Kyma Technologies, Inc., a leading supplier of low defect density native gallium nitride (GaN) substrates, announced today that they have been selected for two new Phase I SBIR projects under the Missile Defense Agency (MDA) SBIR/STTR program. These selections closely follow Kyma's recent win of a new Phase II STTR effort, also under the MDA SBIR/STTR program. Each of these programs is focused on continued development of native gallium nitride (GaN) materials and devices and are driven by the potential of native GaN to enable critical advances in next generation military radar systems.

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