Kyma offers several GaN and Related III-N Materials including GaN substrates of various orientations and electrical conductivity, polycrystalline GaN, crystalline GaN & AlN templates, and custom III-N epiwafers.
Please see our specific offerings below; those which are in-stock will feature a "click here to buy now" link to our on-line store.
Kyma’s AlN templates, available in diameters from 2" to 12", consist of a thin layer of crystalline AlN which was grown epitaxially by PVDNC™ on a sapphire or silicon substrate.
Kyma supplies Custom III-N Epiwafers both for materials studies and for a number of device applications, including light emitting diodes (LEDs), microwave / RF transistors, acoustic wave filters, photodiodes, and power switching.
Kyma’s 200-mm HVPE GaN on QST® Templates consist of 10 microns of HVPE GaN grown on 200-mm diameter QST® substrates provided by Qromis, Inc.
Kyma’s GaN on sapphire templates are available in diameters from 2" up to 8" or 200-mm and consist of a thin layer of crystalline GaN grown by HVPE on a sapphire substrate. Epi-ready templates now available...inquire today!
Kyma’s GaN templates are available in diameters from 2" up to 8" or 200-mm and consist of a thin layer of crystalline GaN grown epitaxially by HVPE on a silicon substrate.
Kyma's polycrystalline GaN (polyGaN) powder is manufactured in-house at Kyma - we are in the process of creating its specifications sheet but feel free to inquire as the product is available today.
Kyma's polycrystalline GaN (polyGaN) materials are useful for applications that require higher purity and/or lower surface area than legacy sources.
Kyma's c-plane GaN substrates have low-defect density and are epi-ready substrate for homoepitaxial growth of high performance GaN device structures.
Kyma's non-polar bulk GaN substrates include both a-plane and m-plane substrates which are sliced from GaN boules and can be prepared with on-axis orientation or can be intentionally misoriented, depending on customer requirements.
Kyma's semi-polar bulk GaN substrates are sliced from c-plane GaN boules and present an exciting surface orientation for a number of advanced device structures, especially in the area of green LEDs and laser diodes.