Kyma Names Tanya Paskova as Chief Scientist

Kyma Technologies, Inc., a leading supplier of ultra-high purity crystalline gallium nitride (GaN) and aluminum nitride (AlN) materials and related products and services, announced today the hire of Dr. Tanya Paskova, a world renowned expert in gallium nitride (GaN) crystal growth and characterization, as Kyma's Chief Scientist.

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Kyma Offers Larger Native Semi-Insulating GaN Substrates

Kyma Technologies, Inc., a leading supplier of ultra-high purity crystalline gallium nitride (GaN) and aluminum nitride (AlN) materials and related products and services announced the new availability of 25mm x 25mm native semi-insulating GaN (SI GaN) substrates. This new product represents a natural addition to Kyma's native SI GaN substrate product line, which also includes 10mm x 10mm and 18mm x 18mm substrates.

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Kyma Names New Corporate Counsel

Kyma Technologies announced today that their new general corporate counsel is the Raleigh based law firm Wyrick Robbins Yates & Ponton LLP. Partner J. Christopher Lynch is Kyma's lead attorney.

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Kyma and OSEMI Partner at SEMICON China 2007

Kyma Technologies, Inc. (Kyma) and OSEMI Inc. will join forces at SEMICON China to market both companies products. SEMICON China will be held later this week at the Shanghai New International Expo Centre in Shanghai, China.

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Kyma Technologies Announces Key Management Changes

Kyma Technologies, Inc. (Kyma), a leading supplier of advanced crystalline gallium nitride substrates and related materials, today announced the promotions of Dr. Edward Preble to the position of Chief Operating Officer (COO) and Mr. Terry Clites to the position of Operations Manager. Also announced is the departure of Mr. Mark Williams, company co-founder and former COO.

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Kyma Technologies Wins Defense Contract to Advance Gallium Nitride Materials for Power Dense Communications Nodes

Kyma Technologies, Inc. (Kyma) has been awarded up to $3.3M under a new multi-year contract by the Department of Defense, with funding support from both the Missile Defense Agency (MDA) and Air Force Research Laboratory (AFRL). Under the new contract, Kyma is focusing its efforts on advancing GaN-based high-power high-frequency (HPHF) electronic device technology by employing Kyma's low defect density native GaN substrate materials. Native GaN has the potential to enhance the performance and reliability of a variety of radar, electronic warfare, communications and optoelectronic systems essential to the Department of Defense.

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Kyma Technologies Offers Gallium Nitride and Aluminum Nitride Template Product Line

Kyma Technologies, Inc. (Kyma) announced today the addition of high quality gallium nitride (GaN) templates and aluminum nitride (AlN) templates to its growing single-crystal nitride semiconductor substrate product line. Both the AlN and the GaN templates are excellent substrates for use in building a broad range of high performance nitride semiconductor devices.

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Kyma Technologies Announces Cooperative Research and Development Agreement with United States Air Force Research Laboratories

Kyma Technologies, Inc. has signed a cooperative research and development agreement (CRADA) with the U.S. Air Force Research Laboratory (AFRL) to further understand how low defect density native gallium nitride (GaN) substrates might positively impact GaN field effect transistor (FET) device performance and reliability. The AFRL program manager for the CRADA is Mr. John Blevins, while Dr. Drew Hanser is the technical lead for Kyma Technologies.

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