Kyma Technologies offers 200-mm HVPE GaN on QST® Templates, which consist of a 10-micron thick layer of high-quality HVPE GaN grown on 200-mm diameter QST® substrates. The QST® substrates, provided by Qromis, Inc., are CMOS-fab friendly and feature a thermal expansion coefficient closely matched to that of GaN. This enables the growth of thick GaN layers while maintaining low bow, a crucial factor for device fabrication.The thick HVPE GaN overlayer on these templates boasts a low defect density and high structural quality, providing an epi-ready surface that is ideal for the growth of GaN device layers. This combination of substrate properties and high-quality GaN growth makes Kyma's 200-mm HVPE GaN on QST® Templates an excellent choice for manufacturers developing advanced GaN-based devices.For applications requiring smaller form factors, Kyma has developed a process to create customized HVPE GaN on QST® Templates, such as 1-inch squares. The company is also capable of producing other form factors, including 150-mm diameter templates, to meet the specific needs of their clients. Customers are encouraged to reach out to Kyma to discuss their unique requirements and explore the possibilities for custom template solutions.
Reach out to UsKyma’s GaN on sapphire templates are available in diameters from 2" up to 8" or 200-mm and consist of a thin layer of crystalline GaN grown by HVPE on a sapphire substrate. Epi-ready templates now available...inquire today!
Learn MoreKyma’s GaN templates are available in diameters from 2" up to 8" or 200-mm and consist of a thin layer of crystalline GaN grown epitaxially by HVPE on a silicon substrate.
Learn MoreKyma’s 200-mm HVPE GaN on QST® Templates consist of 10 microns of HVPE GaN grown on 200-mm diameter QST® substrates provided by Qromis, Inc.
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