Kyma offers (010) orientation single crystal gallium oxide (ß-Ga₂O₃) substrates (and epiwafers) to support the development of epitaxial growth and device development in this exciting new materials system.

Crystalline beta gallium oxide (ß-Ga₂O₃) is a promising wide bandgap semiconductor (WBGS) material due in part to its large bandgap of 4.8 - 4.9 eV, its high breakdown field of 8 MV/cm, and its high dielectric constant of 10, and good electron mobilities, which translate to a high voltage Baliga figure of merit (HV-BFOM) that is more than 3000 times greater than that of Si, more than 8 times greater than that of 4H-SiC, and more than 4 times greater than that of GaN. Also, its high frequency Baliga figure of merit (HF-BFOM) is ~150 times that of Si, ~3 times that of 4H-SiC, and 50% greater than that of GaN. Kyma's Ga₂O₃ substrates are fabricated from high quality bulk ß-Ga₂O₃ crystals.